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Test and analyze to determine the root cause of failure in GaN-based RF active and passive devices

Decide and perform experiments to analyse and determine the root cause of failure in GaN devices (e.g. Transistors, Capacitors, Inductors, Resistors, and Diode) and circuits.
Join the cross-functional teams on appropriate FMEA (Failure Mode Effects & Analysis) techniques to indicate the failure mechanisms of the devices.
Participate teamwork on testing, process development and yield improvements.
Lead and drives device reliability/qualification activities, and data correlation studies.
Collect, analyse and manage large & disparate data sets and distill information into concise presentations with possible recommendations as quick feedback to the engineering team.
Develop new FMEA techniques to improve detection capability, productivity or process optimization.
Be a key stakeholder to resolve customers’ questions or concerns related to product qualifications and reliability.
Mentor/coach the junior testing engineers in daily-based laboratory activities.
Be capable to conduct tests overtime (OT) with payment occasionally.

PhD degree in Electrical Engineering (EE), Materials Science or Physics, MS degree in EE with 10+ relevant working experiences.
> 7 years of FMEA experience in step-by-step approach for identifying all possible failures in the semiconductor industry.
FMEA experience in Wide-Bandgap (WBG) devices (GaAs, GaN) is plus.
Good knowledge of WBG device physics and its fabrication is a big plus.
In-Depth understanding of FMEA techniques (e.g. delaying of devices/chips by wet etching or plasma etching and its data analysis) with good hands-on experience in using different analytical techniques (e.g. SIMS, XPS, AES, SEM, FIB-SEM, TEM, AFM, etc.)
Understanding of semiconductor device qualification standard such as JEDEC.
Excellent report writing and presentation skills, able to robustly defend data analysis and conclusions where necessary.