About the role
Scientist/Senior Scientist - SiC crystal growth by PVT (APM / NSTIC-GaN), IME role based on the published job description. Key responsibilities and requirements were extracted directly from the posting for quick review.
ResearchOnsiteInstitute of Microelectronics
Key Responsibilities
- We are seeking a talented and passionate Scientist/Senior Scientist to join our silicon carbide (SiC) crystal growth team.
- The successful candidate will play a crucial role in developing crystal growth technologies for semi-insulating SiC wafer production, which are used as substrates for RF and millimeter-wave GaN devices.
- This position is within the National Semiconductor Translation and Innovation Centre (NSTIC) – GaN program.
- Lead and manage SiC crystal growth-related projects, including planning, execution, and reporting.
- Develop and optimize crystal growth technologies for semi-insulating silicon carbide (SiC) wafers used as substrates for RF and millimeter-wave GaN devices.
- Design, execute, and analyze SiC crystal growth experiments using physical vapor transport (PVT) and related growth techniques.
Requirements
- PhD in Materials Science, Electrical Engineering, Physics, or a related discipline.
- 3 - 5 years of hands-on experience in silicon carbide (SiC) crystal growth using the Physical Vapor Transport (PVT) method.
- Experience with chamber-scale simulations for Physical Vapor Transport (PVT) processes.
- Strong background in SiC materials science and characterization of SiC wafers.
- Excellent communication skills, strong industry awareness, and proven problem-solving abilities.
- Highly motivated self-starter with the ability to work independently and collaboratively in a team environment.